RAS PhysicsИзвестия Российской академии наук. Серия физическая Bulletin of the Russian Academy of Sciences: Physics

  • ISSN (Print) 0367-6765
  • ISSN (Online) 3034-6460

Raman scattering in ferromagnetic Ge1−xMnx nanowires

PII
S0367676525020227-1
DOI
10.31857/S0367676525020227
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 89 / Issue number 2
Pages
290-293
Abstract
The temperature dependence of Raman scattering is investigated in nanowires of a dilute magnetic semiconductor Ge0.99Mn0.01. It was found that with increasing temperature, a red shift (“softening”) of the optical LO-phonon line occurs at T ≈ 25 K. The observed behaviour correlates with the data of the electron paramagnetic resonance of mobile charge carriers and indicates a strong interaction of holes with the phonon and magnetic subsystems.
Keywords
разбавленные магнитные полупроводники ориентированные нанопроволоки магнитная восприимчивость комбинационное рассеяния света
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
19

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